Infineon IPS031R

Общее назначение1Не требуется3.3A

Overview

The IPS031N03L G is MOSFET N-Ch 30V 90A IPAK-3 OptiMOS 3, that includes OptiMOS 3 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPS031N03LGAKMA1 IPS031N03LGXK SP000788214, that offers Unit Weight features such as 0.139332 oz, Mounting Style is designed to work in Through Hole, as well as the OptiMOS Tradename, the device can also be used as IPAK-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 94 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 5 ns, and the Rise Time is 6 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 90 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 4.4 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 34 ns, and Typical Turn On Delay Time is 9 ns, and the Forward Transconductance Min is 100 S, and Channel Mode is Enhancement.

The IPS031N03LG is MOSFET N-CH 30V 90A TO251-3 manufactured by INFINEON. The IPS031N03LG is available in TO-251-3 Short Leads, IPak, TO-251AA Package, is part of the FETs - Single, , and with support for MOSFET N-CH 30V 90A TO251-3.

Features

Applications

• Wireless/Networking Cards
• Low Voltage I/O System Power
• Hard Disk Drives
• Solid-State Drives
• Hot Swap
• HDD and SSD
• Hot Swap
• Wireless Modem Data Cards
• PC Cards
• HDD, SSD