Infineon IR2153PBF

Полумост210 В ~ 15,6 В

Overview

Features • Integrated 600V half-bridge gate driver • 15.6V zener clamp on Vcc • True micropower start up • Tighter initial deadtime control • Low temperature coefficient deadtime • Shutdown feature (1/6th Vcc) on CT pin • Increased undervoltage lockout Hysteresis (1V) • Lower power level-shifting circuit • Constant LO, HO pulse widths at startup • Lower di/dt gate driver for better noise immunity • Low side output in phase with RT • Internal 50nsec (typ.) bootstrap diode (IR2153D) • Excellent latch immunity on all inputs and outputs • ESD protection on all leads • Also available LEAD-FREE

 A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

Features

Applications

• A/D drivers
• Line drivers
• Portable computers
• High-speed communications
• RGB applications
• Broadcast equipment
• Active filtering
• Head-up and Head mounted displays
• High current laser/LED systems
• LCD/LCoS/DLP portable and embedded pico projectors