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IRGP6650DPBF

Infineon IRGP6650DPBF

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Infineon Technologies
IRGP6650DPBF
IRGP6650 - DISCRETE IGBT WITH AN
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₽248.56

Обновление цены:несколько месяцев назад

Гарантия качества Bostock

912ob9001 201514001 201545001 201813485 2016esdduns
Детали продукта

Overview

IRGP6650D-EPBF with pin details, that includes Tube Packaging, they are designed to operate with a 0.229281 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-247-3, Input Type is designed to work in Standard, as well as the Through Hole Mounting Type, the device can also be used as TO-247AD Supplier Device Package. In addition, the Configuration is Single, the device is offered in 306W Power Max, the device has a 50ns of Reverse Recovery Time trr, and Current Collector Ic Max is 80A, and the Voltage Collector Emitter Breakdown Max is 600V, and Current Collector Pulsed Icm is 105A, and the Vce on Max Vge Ic is 1.95V @ 15V, 35A, and Switching Energy is 300μJ (on), 630μJ (off), and the Gate Charge is 75nC, and Td on off 25°C is 40ns/105ns, and the Test Condition is 400V, 35A, 10 Ohm, 15V, and Pd Power Dissipation is 306 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 40 C, and the Collector Emitter Voltage VCEO Max is 600 V, and Collector Emitter Saturation Voltage is 1.65 V, and the Continuous Collector Current at 25 C is 80 A, and Gate Emitter Leakage Current is 100 nA, and the Maximum Gate Emitter Voltage is 20 V, and Continuous Collector Current Ic Max is 80 A.

IRGP6640DPBF with circuit diagram, that includes 1.65 V Collector Emitter Saturation Voltage, they are designed to operate with a 600 V Collector Emitter Voltage VCEO Max, Configuration is shown on datasheet note for use in a Single, that offers Continuous Collector Current at 25 C features such as 53 A, Continuous Collector Current Ic Max is designed to work in 53 A, as well as the 53A Current Collector Ic Max, the device can also be used as 72A Current Collector Pulsed Icm. In addition, the Gate Charge is 50nC, the device is offered in 100 nA Gate Emitter Leakage Current, the device has a Standard of Input Type, and Maximum Gate Emitter Voltage is 20 V, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 40 C, and the Mounting Type is Through Hole, and Mounting Style is Through Hole, and the Package Case is TO-247-3, and Packaging is Tube, and the Pd Power Dissipation is 200 W, and Power Max is 200W, and the Reverse Recovery Time trr is 70ns, and Supplier Device Package is TO-247AC, and the Switching Energy is 300μJ (on), 840μJ (off), and Td on off 25°C is 40ns/100ns, and the Test Condition is 400V, 24A, 10 Ohm, 15V, and Vce on Max Vge Ic is 1.95V @ 15V, 24A, and the Voltage Collector Emitter Breakdown Max is 600V.

Features


·  Welding

·  H Bridge Converters

 


 

Bulk Package

Applications


? Meets Intel? Server Specifications

? 5 V to 20 V Input Voltage Range

? 0.9 V/1.35 V Fixed Boot Voltage

? Adjustable Output Voltage with SVID Interface

? Integrated Gate Driver and Power MOSFETs

? Up to 14 A TDC Output Current

 


Характеристики продукта
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Пакет: Насыпной
Статус части: Активный
Infineon Technologies

Infineon Technologies

Infineon Technologies - ведущая мировая полупроводниковая компания, основанная в 1999 году со штаб-квартирой в Мюнхене, Германия. Компания специализируется на производстве высокопроизводительных силовых полупроводников, датчиков и микроконтроллеров для автомобильной промышленности, промышленности, управления питанием и IoT-сектора.

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Доход: 85M

$85 миллионов в доходах в 2022 году, увеличение на 63% по сравнению с 2021 годом.

Страны: 105

Bostock обслуживает клиентов в 105 странах мира.

Отгруженные части: 25M+

Мы отгрузили более 25 миллионов частей за последние пять лет, что составляет увеличение на 148% по сравнению с предыдущими пятью годами.

Производители: 950

В 2022 году Bostock продал части от более чем 950 производителей.

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