Infineon SRF66V10ITNBF1SA1

Overview

The 2N930B is Bipolar Transistors - BJT NPN Gen Pur SS, that includes 2N930 Series, they are designed to operate with a Bulk Packaging, Part Aliases is shown on datasheet note for use in a BK, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-18, as well as the Single Configuration, the device can also be used as 45 V Collector Emitter Voltage VCEO Max. In addition, the Transistor Polarity is NPN, the device is offered in 0.5 V Collector Emitter Saturation Voltage, the device has a 60 V of Collector Base Voltage VCBO, and Emitter Base Voltage VEBO is 6 V, and the Gain Bandwidth Product fT is 45 MHz, and DC Collector Base Gain hfe Min is 100, and the DC Current Gain hFE Max is 300.

2NB52 with EDA / CAD Models manufactured by ST. The 2NB52 is available in TO-251 Package, is part of the IC Chips.

Features