IR IPS0551T

Общее назначение1Не требуется35A

Overview

The IPS050N03L G is MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3, that includes OptiMOS 3 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPS050N03LGAKMA1 IPS050N03LGXK SP000810848, that offers Unit Weight features such as 0.139332 oz, Mounting Style is designed to work in Through Hole, as well as the OptiMOS Tradename, the device can also be used as IPAK-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 68 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 3.8 ns, and the Rise Time is 13 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 50 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 5 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 25 ns, and Typical Turn On Delay Time is 6.7 ns, and the Channel Mode is Enhancement.

IPS051S with circuit diagram manufactured by IR. The IPS051S is available in TO-262 Package, is part of the IC Chips.

Features

Applications

• Network switches
• Networking
• Telecommunications
• Industrial
• Datacom
• Electric vehicle
• Avionics systems
• Safe board insertion and extraction
• Industrial computers and servers
• Redundant-array-of-independent-disk (RAID) storage