Microchip APTM50HM75SCTG

Карбид кремния (SiC)4 N-канальные (полумост)500V46A90 мОм @ 23 А, 10 В5 В @ 2,5 мА

Overview

The APTM50HM75FT3G is MOSFET 4N-CH 500V 46A SP3, that includes Bulk Packaging, they are designed to operate with a SP3 Package Case, it has an Operating Temperature range of -40°C ~ 150°C (TJ), that offers Mounting Type features such as Chassis Mount, Supplier Device Package is designed to work in SP3, as well as the 4 N-Channel (H-Bridge) FET Type, the device can also be used as 357W Power Max. In addition, the Drain to Source Voltage Vdss is 500V, the device is offered in 5600pF @ 25V Input Capacitance Ciss Vds, the device has a Standard of FET Feature, and Current Continuous Drain Id 25°C is 46A, and the Rds On Max Id Vgs is 90 mOhm @ 23A, 10V, and Vgs th Max Id is 5V @ 2.5mA, and the Gate Charge Qg Vgs is 123nC @ 10V.

APTM50HM75FRT with circuit diagram manufactured by APT. The APTM50HM75FRT is available in MODULE Package, is part of the Module.

Features

Bulk Package
Silicon Carbide (SiC) Technology
500V Drain to Source Voltage (Vdss)
46A Current - Continuous Drain (Id) @ 25°C
90mOhm @ 23A, 10V Rds On (Max) @ Id, Vgs
5V @ 2.5mA Vgs(th) (Max) @ Id
123nC @ 10V Gate Charge (Qg) (Max) @ Vgs
5590pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
357W Power - Max
Chassis Mount Mounting Type
SP4 Package / Case
SP4 Supplier Device Package