Microsemi APT70GR120B2

1200 V160 A3,82 мДж (вкл.), 2,58 мДж (выкл.)-55°C ~ 150°C (TJ)TO-247-3

Overview

The APT68GA60LD40 is IGBT 600V 121A 520W TO-264, that includes POWER MOS 8? Series, they are designed to operate with a Tube Packaging, Package Case is shown on datasheet note for use in a TO-264-3, TO-264AA, that offers Input Type features such as Standard, Mounting Type is designed to work in Through Hole, as well as the TO-264 [L] Supplier Device Package, the device can also be used as 520W Power Max. In addition, the Reverse Recovery Time trr is 22ns, the device is offered in 121A Current Collector Ic Max, the device has a 600V of Voltage Collector Emitter Breakdown Max, and IGBT Type is PT, and the Current Collector Pulsed Icm is 202A, and Vce on Max Vge Ic is 2.5V @ 15V, 40A, and the Switching Energy is 715μJ (on), 607μJ (off), and Gate Charge is 198nC, and the Td on off 25°C is 21ns/133ns, and Test Condition is 400V, 40A, 4.7 Ohm, 15V.

The APT6M100K is MOSFET N-CH 1000V 6A TO-220 manufactured by APT. The APT6M100K is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 1000V 6A TO-220, N-Channel 1000V 6A (Tc) 225W (Tc) Through Hole TO-220 [K].

Features

Tube Package
NPT IGBT Type
1200 V Voltage - Collector Emitter Breakdown (Max)
160 A Current - Collector (Ic) (Max)
280 A Current - Collector Pulsed (Icm)
3.2V @ 15V, 70A Vce(on) (Max) @ Vge, Ic
961 W Power - Max
3.82mJ (on), 2.58mJ (off) Switching Energy
Standard Input Type
544 nC Gate Charge
33ns/278ns Td (on/off) @ 25°C
600V, 70A, 4.3Ohm, 15V Test Condition
Through Hole Mounting Type