Microsemi APT75GN120LG

1200 V200 A8620 мкДж (вкл.), 11400 мкДж (выкл.)-55°C ~ 150°C (TJ)К-264-3, К-264АА

Overview

The APT75GN120JDQ3 is IGBT 1200V 124A 379W SOT227, that includes Bulk Packaging, they are designed to operate with a 1.058219 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as ISOTOP, Mounting Type is designed to work in Chassis Mount, as well as the ISOTOPR Supplier Device Package, the device can also be used as Standard Input. In addition, the Configuration is Single, the device is offered in 379W Power Max, the device has a 124A of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 1200V, and the Current Collector Cutoff Max is 200μA, and IGBT Type is Trench Field Stop, and the Vce on Max Vge Ic is 2.1V @ 15V, 75A, and Input Capacitance Cies Vce is 4.8nF @ 25V, and the NTC Thermistor is No, and Pd Power Dissipation is 379 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 1.2 kV, and Collector Emitter Saturation Voltage is 1.7 V, and the Continuous Collector Current at 25 C is 124 A, and Gate Emitter Leakage Current is 600 nA, and the Maximum Gate Emitter Voltage is 30 V, and Continuous Collector Current Ic Max is 124 A.

The APT75GN120L is IGBT 1200V 200A 833W TO264 manufactured by APT. The APT75GN120L is available in TO-264-3, TO-264AA Package, is part of the IGBTs - Single, , and with support for IGBT 1200V 200A 833W TO264.

Features

Tube Package
Trench Field Stop IGBT Type
1200 V Voltage - Collector Emitter Breakdown (Max)
200 A Current - Collector (Ic) (Max)
225 A Current - Collector Pulsed (Icm)
2.1V @ 15V, 75A Vce(on) (Max) @ Vge, Ic
833 W Power - Max
8620µJ (on), 11400µJ (off) Switching Energy
Standard Input Type
425 nC Gate Charge
60ns/620ns Td (on/off) @ 25°C
800V, 75A, 1Ohm, 15V Test Condition
Through Hole Mounting Type