Microsemi JANTXV1N5620

Стандарт800 V1A

Overview

The JANTXV1N5619 is DIODE GEN PURP 600V 1A AXIAL, that includes Military, MIL-PRF-19500/429 Series, they are designed to operate with a Bulk Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as A, Axial, Mounting Type is designed to work in Through Hole, as well as the Fast Recovery = 200mA (Io) Speed, the device can also be used as Standard Diode Type. In addition, the Current Reverse Leakage Vr is 500nA @ 600V, the device is offered in 1.6V @ 3A Voltage Forward Vf Max If, the device has a 600V of Voltage DC Reverse Vr Max, and Current Average Rectified Io is 1A, and the Reverse Recovery Time trr is 250ns, and Capacitance Vr F is 25pF @ 12V, 1MHz, it has an Operating Temperature Junction range of -65°C ~ 175°C.

JANTXV1N5619US with circuit diagram, that includes 1A Current Average Rectified Io, they are designed to operate with a 500nA @ 600V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Surface Mount, it has an Operating Temperature Junction range of -65°C ~ 175°C, as well as the SQ-MELF, A Package Case, the device can also be used as Bulk Packaging. In addition, the Reverse Recovery Time trr is 250ns, the device is offered in Military, MIL-PRF-19500/429 Series, the device has a Fast Recovery = 200mA (Io) of Speed, and Supplier Device Package is D-5A, and the Voltage DC Reverse Vr Max is 600V, and Voltage Forward Vf Max If is 1.6V @ 3A.

Features

Applications

• DC motor control and drives
• Battery chargers
• Welders
• Power converters
• Reverse Polarity Protection
• Ultra High-Speed Switching
• Freewheeling
• Polarity Protection Diode
• Recirculating Diode
• Switching Diode