NXP BFU590GX

NPN12V8,5 ГГц

Overview

BFU580GX with pin details, that includes NPI Part Build_RF Transistors Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-261-4, TO-261AA, Technology is designed to work in Si, as well as the Surface Mount Mounting Type, the device can also be used as SOT-223 Supplier Device Package. In addition, the Configuration is Dual, the device is offered in 1W Power Max, the device has a NPN of Transistor Type, and Current Collector Ic Max is 60mA, and the Voltage Collector Emitter Breakdown Max is 12V, and DC Current Gain hFE Min Ic Vce is 60 @ 30mA, 8V, and the Frequency Transition is 11GHz, and Noise Figure dB Typ f is 1.4dB @ 1.8GHz, and the Gain is 10.5dB, and Pd Power Dissipation is 1000 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, and the Operating Frequency is 900 MHz, and Collector Emitter Voltage VCEO Max is 16 V, and the Transistor Polarity is NPN, and Emitter Base Voltage VEBO is 2 V, and the Maximum DC Collector Current is 100 mA, and Continuous Collector Current is 30 mA, and the DC Collector Base Gain hfe Min is 60.

BFU550XVL with circuit diagram, that includes 50mA Current Collector Ic Max, they are designed to operate with a 60 @ 15mA, 8V DC Current Gain hFE Min Ic Vce, Frequency Transition is shown on datasheet note for use in a 11GHz, that offers Gain features such as 15.5dB, Mounting Type is designed to work in Surface Mount, Gull Wing, as well as the 1.3dB @ 1.8GHz Noise Figure dB Typ f, the device can also be used as TO-253-4, TO-253AA Package Case. In addition, the Packaging is Tape & Reel (TR), the device is offered in 450mW Power Max, the device has a SOT-143B of Supplier Device Package, and Transistor Type is NPN, and the Voltage Collector Emitter Breakdown Max is 12V.

Features