NXP J177,126

30 V300 ОмTO-226-3, TO-92-3 (TO-226AA) Формируемые выводы

Overview

The J177 is JFET P-CH 30V 0.35W TO92, that includes Bulk Packaging, they are designed to operate with a 0.016000 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-226-3, TO-92-3 (TO-226AA), Technology is designed to work in Si, as well as the Through Hole Mounting Type, the device can also be used as TO-92-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in P-Channel FET Type, the device has a 350mW of Power Max, and Voltage Breakdown V BRGSS is 30V, and the Current Drain Idss Vds Vgs=0 is 1.5mA @ 15V, and Voltage Cutoff VGS off Id is 800mV @ 10nA, and the Resistance RDS On is 300 Ohm, and Pd Power Dissipation is 360 mW, and the Id Continuous Drain Current is - 10 nA, and Vds Drain Source Breakdown Voltage is - 15 V, and the Rds On Drain Source Resistance is 250 Ohms, and Transistor Polarity is P-Channel, and the Vgs Gate Source Breakdown Voltage is 30 V, and Gate Source Cutoff Voltage is 2.25 V.

J176-TR with circuit diagram manufactured by SI. The J176-TR is available in TO-92 Package, is part of the JFETs (Junction Field Effect).

Features

Tape & Box (TB) Package
30 V Voltage - Breakdown (V(BR)GSS)
30 V Drain to Source Voltage (Vdss)
1.5 mA @ 15 V Current - Drain (Idss) @ Vds (Vgs=0)
800 mV @ 10 nA Voltage - Cutoff (VGS off) @ Id
8pF @ 10V (VGS) Input Capacitance (Ciss) (Max) @ Vds
300 Ohms Resistance - RDS(On)
400 mW Power - Max
150°C (TJ) Operating Temperature
Through Hole Mounting Type