NXP MRFG35010ANT1

pHEMT-транзистор3,55 ГГц10 дБ12 V130 мА9W

Overview

Gallium Arsenide PHEMT RF Power Field Effect Transistor

• Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GHz, 12 Volts,   IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A   @ 0.01% Probability)      Output Power — 1 Watt      Power Gain — 10 dB      Efficiency — 30%• 10 Watts P1dB @ 3.55 GHz• Excellent Phase Linearity and Group Delay Characteristics• High Gain, High Efficiency and High Linearity

Features

• 9 Watts P1dB, CW, at 3550 MHz

• Excellent Group Delay and Phase Linearity Characteristics

• High Linearity and Efficiency

• In reel-to-reel tape. 1000 Units, 16 mm Tape Width, 13-inch Reel; T1 Suffix.

Applications

Switching applications