NXP Semiconductors PMGD175XNEX

MOSFET (оксид металла)2 N-канала (сдвоенные)30V870 мА (Ta)252 мОм @ 900 мА, 4,5 В1,25 В @ 250 мкА

Overview

The PMGD175XN,115 is MOSFET 2N-CH 30V 0.9A 6TSSOP, that includes Digi-ReelR Packaging, they are designed to operate with a 6-TSSOP, SC-88, SOT-363 Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 6-TSSOP, as well as the 2 N-Channel (Dual) FET Type, the device can also be used as 390mW Power Max. In addition, the Drain to Source Voltage Vdss is 30V, the device is offered in 75pF @ 15V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 900mA, and the Rds On Max Id Vgs is 225 mOhm @ 1A, 4.5V, and Vgs th Max Id is 1.5V @ 250μA, and the Gate Charge Qg Vgs is 1.1nC @ 4.5V.

PMGD175XN with circuit diagram manufactured by NXP. The PMGD175XN is available in SOT-363 Package, is part of the FETs - Arrays.

Features

Bulk Package
MOSFET (Metal Oxide) Technology
30V Drain to Source Voltage (Vdss)
870mA (Ta) Current - Continuous Drain (Id) @ 25°C
252mOhm @ 900mA, 4.5V Rds On (Max) @ Id, Vgs
1.25V @ 250µA Vgs(th) (Max) @ Id
1.65nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
81pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
260mW (Ta) Power - Max
Surface Mount Mounting Type