Infineon IPD80R280P7ATMA1

N-канальный800 V17A (Tc)3,5 В @ 360 мкА101 Вт (Тс)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

Infineon CoolMOS P7 Power Transistors combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2�C to 8�C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Features

• Best-in-class FOM R DS(on) * Eoss; reduced Qg, Ciss, and Coss

• Best-in-class DPAK RDS(on) of 280m?

• Best-in-class V(GS)th of 3V and smallest V (GS)th variation of ± 0.5V

• Integrated Zener diode ESD protection up to Class 2 (HBM)

• Best-in-class quality and reliability

• Fully optimized portfolio

Applications

• LED

• Lighting

• low power Chargers and Adapters

• Audio AUX power

• Industrial power