ON ECH8672-TL-H

MOSFET (оксид металла)Затвор логического уровня2 P-канала (сдвоенные)20V3.5A85 мОм @ 1,5 А, 4,5 В

Overview

The ECH8668-TL-H is MOSFET N/P-CH 20V 7.5A/5A ECH8, that includes ECH8668 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 8-SMD, Flat Lead, Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in 8-ECH Supplier Device Package, the device has a N and P-Channel of FET Type, and Power Max is 1.5W, and the Transistor Type is 1 N-Channel 1 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 1060pF @ 10V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 7.5A, 5A, and Rds On Max Id Vgs is 17 mOhm @ 4A, 4.5V, and the Gate Charge Qg Vgs is 10.8nC @ 4.5V, and Id Continuous Drain Current is 7.5 A - 5 A, and the Vds Drain Source Breakdown Voltage is 20 V, and Rds On Drain Source Resistance is 17 mOhms 38 mOhms, and the Transistor Polarity is N-Channel P-Channel.

The ECH8672 is MOSFET 2P-CH 20V 3.5A ECH8 manufactured by SANYO. The ECH8672 is available in 8-SMD, Flat Lead Package, is part of the FETs - Arrays, , and with support for MOSFET 2P-CH 20V 3.5A ECH8.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
3.5A Current - Continuous Drain (Id) @ 25°C
85mOhm @ 1.5A, 4.5V Rds On (Max) @ Id, Vgs
4nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
320pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
1.5W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type