ON FDB20AN06A0

N-канальный60 V9A (Ta), 45A (Tc)4 В @ 250 мкА90 Вт (Тс)-55°C ~ 175°C (TJ)Поверхностный монтаж

Overview

The FDB16AN08A0 is MOSFET N-CH 75V 58A TO-263AB, that includes PowerTrench Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.046296 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 135 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 30 ns, and the Rise Time is 82 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 58 A, and Vds Drain Source Breakdown Voltage is 75 V, and the Rds On Drain Source Resistance is 13 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 28 ns, and Typical Turn On Delay Time is 8 ns, and the Channel Mode is Enhancement.

FDB19N20CTM with circuit diagram manufactured by FAI. The FDB19N20CTM is available in SO-263 Package, is part of the IC Chips.

Features

Applications

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching