ON FDC6312P

MOSFET (оксид металла)Затвор логического уровня2 P-канала (сдвоенные)20V2.3A115 мОм @ 2,3 А, 4,5 В1,5 В @ 250 мкА

Overview

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
2.3A Current - Continuous Drain (Id) @ 25°C
115mOhm @ 2.3A, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
7nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
467pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
700mW Power - Max
Surface Mount Mounting Type