ON FDD8426H

MOSFET (оксид металла)Затвор логического уровняN- и P-каналы40V12A, 10A12 мОм @ 12 А, 10 В3 В @ 250 мкА

Overview

The FDD8424H is MOSFET N/P-CH 40V 9A/6.5A DPAK, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.009184 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-5, DPak (4 Leads + Tab), TO-252AD, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a TO-252-4L of Supplier Device Package, and Configuration is Dual Common Drain, and the FET Type is N and P-Channel, and Power Max is 1.3W, and the Transistor Type is 1 N-Channel 1 P-Channel, and Drain to Source Voltage Vdss is 40V, and the Input Capacitance Ciss Vds is 1000pF @ 20V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 9A, 6.5A, and Rds On Max Id Vgs is 24 mOhm @ 9A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 20nC @ 10V, and the Pd Power Dissipation is 3.1 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 6 ns 3 ns, and the Rise Time is 13 ns 3 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 9 A, and Vds Drain Source Breakdown Voltage is 40 V, and the Rds On Drain Source Resistance is 24 mOhms, and Transistor Polarity is N-Channel P-Channel, and the Typical Turn Off Delay Time is 17 ns 20 ns, and Typical Turn On Delay Time is 7 ns, and the Forward Transconductance Min is 29 S, and Channel Mode is Enhancement.

FDD8424H_F085A with circuit diagram, that includes 9A, 6.5A Current Continuous Drain Id 25°C, they are designed to operate with a 40V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as N and P-Channel, Gate Charge Qg Vgs is designed to work in 20nC @ 10V, as well as the 1000pF @ 20V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in TO-252-5, DPak (4 Leads + Tab), TO-252AD Package Case, the device has a Tube of Packaging, and Power Max is 1.3W, and the Rds On Max Id Vgs is 24 mOhm @ 9A, 10V, and Series is PowerTrenchR, and the Supplier Device Package is TO-252-5, and Vgs th Max Id is 3V @ 250μA.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
40V Drain to Source Voltage (Vdss)
12A, 10A Current - Continuous Drain (Id) @ 25°C
12mOhm @ 12A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
53nC @ 10V Gate Charge (Qg) (Max) @ Vgs
2735pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
1.3W Power - Max
Surface Mount Mounting Type