ON FDFS6N754

N-канальный30 V4A (Ta)2,5 В @ 250 мкА1,6 Вт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The FDFS6N548 is MOSFET N-CH 30V 7A 8-SOIC, that includes Reel Packaging, they are designed to operate with a 0.006596 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOIC-Narrow-8, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single with Schottky Diode Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 2 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 2 ns, and Rise Time is 2 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 7 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 23 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 14 ns, and the Typical Turn On Delay Time is 6 ns, and Forward Transconductance Min is 20 S, and the Channel Mode is Enhancement.

The FDFS6N303 is MOSFET N-CH 30V 6A 8-SOIC manufactured by FAIRCHILD. The FDFS6N303 is available in 8-SOIC (0.154", 3.90mm Width) Package, is part of the FETs - Single, , and with support for MOSFET N-CH 30V 6A 8-SOIC, N-Channel 30V 6A (Ta) 900mW (Ta) Surface Mount 8-SO, Trans MOSFET N-CH 30V 6A 8-Pin SOIC N T/R.

Features

Max rDS(on) = 56m|? at VGS = 0V, ID= 4A

Max rDS(on) = 75m|? at VGS= 4.5V, ID = 3.5A

VF 0.45V @ 2A

VF 0.28V @ 100mA

Schottky and MOSFET incorporated into single power surface mount SO-8 package

Electrically independent Schottky and MOSFET pinout for design flexibility

Low Gate Charge (Qg = 4nC)

Low Miller Charge

Applications

Inverter

Synchronous Rectifier