ON FDG6316P

MOSFET (оксид металла)Затвор логического уровня2 P-канала (сдвоенные)12V700 мА270 мОм @ 700 мА, 4,5 В1,5 В @ 250 мкА

Overview

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

? ?0.7 A, ?12 V

? RDS(ON) = 270 m @ VGS = ?4.5 V

? RDS(ON) = 360 m @ VGS = ?2.5 V

? RDS(ON) = 650 m @ VGS = ?1.8 V

? Low Gate Charge

? High Performance Trench Technology for Extremely Low RDS(ON)

? Compact Industry Standard SC70?6 Surface Mount Package

? These Devices are Pb?Free and are RoHS Compliant

Applications

? Battery Management

? Load Switch