ON FDMA1430JP

NPN, P-каналПереключатель нагрузки30V

Overview

The FDMA1032CZ is MOSFET N/P-CH 20V MICROFET 2X2, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.001411 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 6-WDFN Exposed Pad, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 6-MicroFET (2x2) of Supplier Device Package, and Configuration is N-Channel P-Channel, and the FET Type is N and P-Channel, and Power Max is 700mW, and the Transistor Type is 1 N-Channel 1 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 340pF @ 10V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 3.7A, 3.1A, and Rds On Max Id Vgs is 68 mOhm @ 3.7A, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 6nC @ 4.5V, and the Pd Power Dissipation is 1.4 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8 ns 11 ns, and the Rise Time is 8 ns 11 ns, and Vgs Gate Source Voltage is 12 V, and the Id Continuous Drain Current is 3.7 A, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 37 mOhms, and Transistor Polarity is N-Channel P-Channel, and the Typical Turn Off Delay Time is 14 ns 37 ns, and Typical Turn On Delay Time is 8 ns 13 ns, and the Forward Transconductance Min is 16 S - 11 S, and Channel Mode is Enhancement.

FDMA1028NZ_F021 with circuit diagram, that includes 3.7A Current Continuous Drain Id 25°C, they are designed to operate with a 20V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 6nC @ 4.5V, as well as the 340pF @ 10V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type. In addition, the Mounting Style is SMD/SMT, the device is offered in 2 Channel Number of Channels, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Package Case is 6-WDFN Exposed Pad, and the Packaging is Digi-ReelR Alternate Packaging, and Power Max is 700mW, and the Rds On Drain Source Resistance is 3.9 mOhms, and Rds On Max Id Vgs is 68 mOhm @ 3.7A, 4.5V, and the Series is PowerTrenchR, and Supplier Device Package is MicroFET 2x2, and the Technology is Si, and Transistor Polarity is N-Channel, and the Transistor Type is 2 N-Channel, and Unit Weight is 0.002116 oz, and the Vds Drain Source Breakdown Voltage is 20 V, and Vgs th Max Id is 1.5V @ 250μA.

Features

• Low profile (maximum 0.8 mm) in the new MicroFET 2x2 package

• RoHS Compliant; HBM ESD protection level > 2 kV usual (Note 3).

Applications

Switching applications