ON FDMC7200S

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)30V7A, 13A22 мОм @ 6А, 10В3 В @ 250 мкА

Overview

This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
7A, 13A Current - Continuous Drain (Id) @ 25°C
22mOhm @ 6A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
10nC @ 10V Gate Charge (Qg) (Max) @ Vgs
660pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
700mW, 1W Power - Max
Surface Mount Mounting Type

Applications

Q1: N-Channel

Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A

Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A

Q2: N-Channel

Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A

Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A

RoHS Compliant

FDMC7200S              Applications

Notebook PC