ON FDMC86106LZ

N-канальный100 V3.3A (Ta), 7.5A (Tc)2,2 В @ 250 мкА2,3 Вт (Ta), 19 Вт (Tc)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The FDMC86102LZ is MOSFET N-CH 100V 7A 8MLP, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.007408 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-PowerWDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a 8-MLP (3.3x3.3), Power33 of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 2.3W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 100V, and the Input Capacitance Ciss Vds is 1290pF @ 50V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 7A (Ta), 18A (Tc), and Rds On Max Id Vgs is 24 mOhm @ 6.5A, 10V, and the Vgs th Max Id is 2.2V @ 250μA, and Gate Charge Qg Vgs is 22nC @ 10V, and the Pd Power Dissipation is 41 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 2.5 ns, and the Rise Time is 2.3 ns, and Vgs Gate Source Voltage is +/- 20 V, and the Id Continuous Drain Current is 7 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 1.6 V, and Rds On Drain Source Resistance is 24 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 19 ns, and the Typical Turn On Delay Time is 7.1 ns, and Qg Gate Charge is 15.3 nC, and the Forward Transconductance Min is 24 S.

FDMC86106 with circuit diagram manufactured by Fairchild. The FDMC86106 is available in QFN8 Package, is part of the FETs - Single.

Features

• Technology for Shielded Gate MOSFETs

• At Vqs = 10 V, I= 3.3 A, Max ros(on)= 103 mQ.

• At Vgs = 4.5 V, Iq = 2.7 A, MaxDsfon) =153 mQ.

• Typical HBM ESD protection level > 3 KV (Note 4)

• 100% UIL Approved and RoHS Compliant

Applications

DC - DC Conversion