ON FDMD82100

MOSFET (оксид металла)2 N-канала (сдвоенные)100V7A19 мОм @ 7А, 10В4 В @ 250 мкА

Overview

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

PowerTrench® Series
Bulk Package
MOSFET (Metal Oxide) Technology
100V Drain to Source Voltage (Vdss)
7A Current - Continuous Drain (Id) @ 25°C
19mOhm @ 7A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
17nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1070pF @ 50V Input Capacitance (Ciss) (Max) @ Vds
1W Power - Max
Surface Mount Mounting Type

Applications

FDMD82100       Features

 

Max rDS(on) = 19 m|? at VGS = 10 V, ID = 7 A

Max rDS(on) = 33 m|? at VGS = 6V, ID = 5.5 A

Ideal for flexible layout in primary side of bridge topology

Termination is Lead-free and RoHS Compliant

100% UIL tested

Kelvin High Side MOSFET drive pin-out capability

FDMD82100       Applications

This product is general usage and suitable for many different applications.