ON FDMS3602S

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)25V15A, 26A5,6 мОм @ 15А, 10В3 В @ 250 мкА

Overview

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
25V Drain to Source Voltage (Vdss)
15A, 26A Current - Continuous Drain (Id) @ 25°C
5.6mOhm @ 15A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
27nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1680pF @ 13V Input Capacitance (Ciss) (Max) @ Vds
1W Power - Max
Surface Mount Mounting Type
Power56 Supplier Device Package

Applications

 

Q1: N-Channel

Max RDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A

Max RDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A

Q2: N-Channel

Max RDS(on) = 2.2 mΩ at VGS = 10 V, ID= 26 A

Max RDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A

Low-inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant    

FDMS3602S             Applications

This product is general usage and suitable for many different applications.