ON FDMS8660S

N-канальный30 V25A (Ta), 40A (Tc)2 В @ 250 мкА2,5 Вт (Ta), 83 Вт (Tc)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The FDMS86568_F085 is MOSFET 60V 80A Power56 N-Chnl PowerTrench, that includes Reel Packaging, they are designed to operate with a 0.008818 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as Power-56-8, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 214 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 13 ns, and Rise Time is 20 ns, and the Vgs Gate Source Voltage is +/- 20 V, and Id Continuous Drain Current is 80 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Vgs th Gate Source Threshold Voltage is 2 V, and the Rds On Drain Source Resistance is 6.6 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 33 ns, and Typical Turn On Delay Time is 21 ns, and the Qg Gate Charge is 55 nC, and Channel Mode is Enhancement.

The FDMS8660AS is MOSFET N-CH 30V 28A POWER56 manufactured by FAIRCHILD. The FDMS8660AS is available in 8-PQFN, Power56 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 30V 28A POWER56, N-Channel 30V 28A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), Trans MOSFET N-CH Si 30V 28A 8-Pin Power 56 T/R.

Features

Max rDS(on) = 2.4m? at VGS = 10V, ID = 25A

Max rDS(on) = 3.5m? at VGS = 4.5V, ID = 21A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

SyncFET Schottky Body Diode

MSL1 robust package design

RoHS Compliant

Applications

Synchronous Rectifier for DC/DC Converters

Notebook Vcore/ GPU low-side switch

Networking Point of Load low-side switch

Telecom secondary side rectification