ON FDP13AN06A0

N-канальный60 V10.9A (Ta), 62A (Tc)4 В @ 250 мкА115 Вт (Тс)-55°C ~ 175°C (TJ)Сквозное отверстие

Overview

The FDP12N60NZ is MOSFET N-CH 600V 12A TO-220, that includes Tube Packaging, they are designed to operate with a 0.063493 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 240 W, the device is offered in 60 ns Fall Time, the device has a 50 ns of Rise Time, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 12 A, and Vds Drain Source Breakdown Voltage is 600 V, and the Vgs th Gate Source Threshold Voltage is 5 V, and Rds On Drain Source Resistance is 530 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 26 nC, and the Forward Transconductance Min is 13.5 S.

FDP12P10 with circuit diagram manufactured by FSC. The FDP12P10 is available in TO220 Package, is part of the IC Chips.

Features

• rDS(on) = 11.5 m? ( Typ.) @ VGS = 10 V, ID = 62 A

• Qg(tot) = 22 nC ( Typ.) @ VGS = 10 V

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

Applications

• Motor load control

• DC-DC converters and off-line UPS

• Distributed power architectures and VRMs