ON FDP8878

N-канальный30 V40A (Tc)2,5 В @ 250 мкА40,5 Вт (Тс)-55°C ~ 175°C (TJ)Сквозное отверстие

Overview

The FDP8874 is MOSFET N-CH 30V 114A TO-220AB, that includes Tube Packaging, they are designed to operate with a FDP8874_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.063493 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 110 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 31 ns, and the Rise Time is 128 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 114 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 3.6 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 44 ns, and Typical Turn On Delay Time is 10 ns, and the Channel Mode is Enhancement.

The FDP8876 is MOSFET N-CH 30V 70A TO-220 manufactured by FAIRCHILD. The FDP8876 is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 30V 70A TO-220, N-Channel 30V 70A (Tc) 70W (Tc) Through Hole TO-220AB.

Features

TDS(ON)= 15mΩ,VGs=10V，ID=40A

TDS(ON)=19mΩVGs=4.5VID=36A

High performance trench technologyfor extremely low DS(ON)

Low gate charge

. High power and current handling capability

.RoHS Compliant

Applications

low gate characteristics (conduction) and fast switching speed