ON FDS8926A

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)30V5.5A30 мОм @ 5,5 А, 4,5 В1 В @ 250 мкА

Overview

The FDS89161LZ is MOSFET 2N-CH 100V 2.7A 8SOIC, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SO of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 N-Channel (Dual), and Power Max is 1.6W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 100V, and the Input Capacitance Ciss Vds is 302pF @ 50V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 2.7A, and Rds On Max Id Vgs is 105 mOhm @ 2.7A, 10V, and the Vgs th Max Id is 2.2V @ 250μA, and Gate Charge Qg Vgs is 5.3nC @ 10V, and the Pd Power Dissipation is 31 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 10 ns, and the Rise Time is 10 ns, and Vgs Gate Source Voltage is +/- 20 V, and the Id Continuous Drain Current is 2.7 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 1.7 V, and Rds On Drain Source Resistance is 105 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 17 ns, and the Typical Turn On Delay Time is 10 ns, and Qg Gate Charge is 5.3 nC, and the Forward Transconductance Min is 7.8 S.

FDS89161L with circuit diagram manufactured by FAIRCHILD. The FDS89161L is available in sop8 Package, is part of the FETs - Arrays.

Features

• Design of high density cells for incredibly low RDS (ON).

• combine high breakdown voltage of 30 V with low gate threshold (totally improved at 2.5V).

• a surface mount package with high power and current handling capacity.

• Surface-mount package housing two MOSFETs.

Applications

Switching applications