ON FDS8949-F085

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)40V6A29 мОм @ 6А, 10В3 В @ 250 мкА

Overview

The FDS8958A is MOSFET N/P-CH 30V 7A/5A 8SOIC, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Packaging, Part Aliases is shown on datasheet note for use in a FDS8958A_NL, that offers Unit Weight features such as 0.006596 oz, Mounting Style is designed to work in SMD/SMT, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is 8-SO, and the Configuration is N-Channel P-Channel, and FET Type is N and P-Channel, and the Power Max is 900mW, and Transistor Type is 1 N-Channel 1 P-Channel, and the Drain to Source Voltage Vdss is 30V, and Input Capacitance Ciss Vds is 575pF @ 15V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 7A, 5A, and the Rds On Max Id Vgs is 28 mOhm @ 7A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 16nC @ 10V, and Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 3 ns 9 ns, and Rise Time is 5 ns 13 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 7 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 28 mOhms 52 mOhms, and the Transistor Polarity is N-Channel P-Channel, and Typical Turn Off Delay Time is 23 ns 14 ns, and the Typical Turn On Delay Time is 8 ns 7 ns, and Forward Transconductance Min is 25 S 10 S, and the Channel Mode is Enhancement.

FDS8958A_NL with EDA / CAD Models manufactured by FSC. The FDS8958A_NL is available in SOP-8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
40V Drain to Source Voltage (Vdss)
6A Current - Continuous Drain (Id) @ 25°C
29mOhm @ 6A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
11nC @ 5V Gate Charge (Qg) (Max) @ Vgs
955pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type