ON FDV301N-F169

N-канальный25 V220 мА (Ta)1,06 В @ 250 мкА350 мВт (Ta)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

FDV301N_NB9V005 with pin details, that includes Reel Packaging, they are designed to operate with a 0.050717 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-23-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 350 mW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 6 ns, and Rise Time is 6 ns, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is 500 mA, and the Vds Drain Source Breakdown Voltage is 25 V, and Rds On Drain Source Resistance is 4 Ohms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 3.5 ns, and the Typical Turn On Delay Time is 3.2 ns, and Channel Mode is Enhancement.

FDV301N_NL with EDA / CAD Models manufactured by FAIRCHILD. The FDV301N_NL is available in TO-23 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
25 V Drain to Source Voltage (Vdss)
220mA (Ta) Current - Continuous Drain (Id) @ 25°C
2.7V, 4.5V Drive Voltage (Max Rds On, Min Rds On)
4Ohm @ 400mA, 4.5V Rds On (Max) @ Id, Vgs
1.06V @ 250µA Vgs(th) (Max) @ Id
0.7 nC @ 4.5 V Gate Charge (Qg) (Max) @ Vgs
±8V Vgs (Max)
9.5 pF @ 10 V Input Capacitance (Ciss) (Max) @ Vds
350mW (Ta) Power Dissipation (Max)
Surface Mount Mounting Type