ON HGTG11N120CND

1200 V43 A950 мкДж (вкл.), 1,3 мДж (выкл.)-55°C ~ 150°C (TJ)TO-247-3

Overview

The HGTG11N120CND is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.

Features

Tube Package
NPT IGBT Type
1200 V Voltage - Collector Emitter Breakdown (Max)
43 A Current - Collector (Ic) (Max)
80 A Current - Collector Pulsed (Icm)
2.4V @ 15V, 11A Vce(on) (Max) @ Vge, Ic
298 W Power - Max
950µJ (on), 1.3mJ (off) Switching Energy
Standard Input Type
100 nC Gate Charge
23ns/180ns Td (on/off) @ 25°C
960V, 11A, 10Ohm, 15V Test Condition
70 ns Reverse Recovery Time (trr)
Through Hole Mounting Type