ON HUF76407DK8T

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)60V90 мОм @ 3,8 А, 10 В3 В @ 250 мкА

Overview

The HUF76407D3ST is MOSFET N-CH 60V 12A DPAK, that includes UltraFET? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.009184 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, DPak (2 Leads + Tab), SC-63, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a TO-252-3 of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 38W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 350pF @ 25V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 12A (Tc), and Rds On Max Id Vgs is 92 mOhm @ 13A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 11.3nC @ 10V, and the Pd Power Dissipation is 38 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 45 ns, and the Rise Time is 32 ns, and Vgs Gate Source Voltage is 16 V, and the Id Continuous Drain Current is 11 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 77 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 43 ns, and Typical Turn On Delay Time is 5 ns, and the Channel Mode is Enhancement.

The HUF76407DK8 is MOSFET 2N-CH 60V SOP-8 manufactured by FAIRCHILD. The HUF76407DK8 is available in 8-SOIC (0.154", 3.90mm Width) Package, is part of the FETs - Arrays, , and with support for MOSFET 2N-CH 60V SOP-8.

Features

UltraFET™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
90mOhm @ 3.8A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
11.2nC @ 10V Gate Charge (Qg) (Max) @ Vgs
330pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2.5W Power - Max
Surface Mount Mounting Type