ON HUFA75332G3

N-канальный55 V60A (Tc)4 В @ 250 мкА145 Вт (Тс)-55°C ~ 175°C (TJ)Сквозное отверстие

Overview

The HUFA75321D3ST is MOSFET N-CH 55V 20A DPAK, that includes Reel Packaging, they are designed to operate with a HUFA75321D3ST_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.009184 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 93 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 66 ns, and the Rise Time is 55 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 20 A, and Vds Drain Source Breakdown Voltage is 55 V, and the Rds On Drain Source Resistance is 36 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 47 ns, and Typical Turn On Delay Time is 11 ns, and the Channel Mode is Enhancement.

HUFA75329S3 with EDA / CAD Models manufactured by FSC. The HUFA75329S3 is available in TO220 Package, is part of the FETs - Single.

Features

Applications

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.