ON HUFA76404DK8T

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)62V3.6A110 мОм @ 3,6 А, 10 В3 В @ 250 мкА

Overview

HUFA75852G3_F085 with pin details, that includes Tube Packaging, they are designed to operate with a 0.225401 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-247-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 500 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Id Continuous Drain Current is 75 A, and the Vds Drain Source Breakdown Voltage is 150 V, and Rds On Drain Source Resistance is 16 mOhms, and the Transistor Polarity is N-Channel.

HUFA75842S3S with circuit diagram manufactured by FSC. The HUFA75842S3S is available in TO-263 Package, is part of the IC Chips, N-Channel 150V 43A (Tc) 230W (Tc) Surface Mount D?PAK (TO-263AB), Trans MOSFET N-CH 150V 43A 3-Pin(2+Tab) TO-263AB Rail.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
62V Drain to Source Voltage (Vdss)
3.6A Current - Continuous Drain (Id) @ 25°C
110mOhm @ 3.6A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
4.9nC @ 5V Gate Charge (Qg) (Max) @ Vgs
250pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2.5W Power - Max
Surface Mount Mounting Type