ON HUFA76407DK8T

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)60V90 мОм @ 3,8 А, 10 В3 В @ 250 мкА

Overview

The HUFA76404DK8T is MOSFET 2N-CH 62V 3.6A 8-SOIC, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 8-SOIC (0.154", 3.90mm Width) Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 8-SOIC, as well as the 2 N-Channel (Dual) FET Type, the device can also be used as 2.5W Power Max. In addition, the Drain to Source Voltage Vdss is 62V, the device is offered in 250pF @ 25V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 3.6A, and the Rds On Max Id Vgs is 110 mOhm @ 3.6A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 4.9nC @ 5V.

The HUFA76407D3S is MOSFET N-CH 60V 12A DPAK manufactured by FAIRCHILD. The HUFA76407D3S is available in TO-252-3, DPak (2 Leads + Tab), SC-63 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 60V 12A DPAK, N-Channel 60V 12A (Tc) 38W (Tc) Surface Mount TO-252AA, Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) TO-252AA.

Features

UltraFET™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
90mOhm @ 3.8A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
11.2nC @ 10V Gate Charge (Qg) (Max) @ Vgs
330pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2.5W Power - Max
Surface Mount Mounting Type