ON HUFA76413DK8T

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)60V5.1A49 мОм при 5,1 А, 10 В3 В @ 250 мкА

Overview

The HUFA76409D3ST is MOSFET N-CH 60V 18A DPAK, that includes UltraFET Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.009184 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 49 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 50 ns, and the Rise Time is 34 ns, and Vgs Gate Source Voltage is 16 V, and the Id Continuous Drain Current is 17 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 52 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 41 ns, and Typical Turn On Delay Time is 5.3 ns, and the Channel Mode is Enhancement.

HUFA76413DK8 with circuit diagram manufactured by FAIRHILD. The HUFA76413DK8 is available in SOP8 Package, is part of the FETs - Arrays.

Features

UltraFET™ Series
Bulk Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
5.1A Current - Continuous Drain (Id) @ 25°C
49mOhm @ 5.1A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
23nC @ 10V Gate Charge (Qg) (Max) @ Vgs
620pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2.5W Power - Max
Surface Mount Mounting Type

Applications

.Motor and Load Control Powertrain Management

HUFA76413DK8T      Features

150°℃ Maximum Junction Temperature

UIS Capability(Single Pulse and Repetitive Pulse)

Ultra-Low On-ResistanceDS(ON)=0.049VGs=10V

·Ultra-Low On-ResistancerDs(ON)=0.056ΩVGs=5V