ON NSVBC817-40WT1G

NPN500 мА45 V

Overview

NSVBC817-16LT1G with pin details, that includes Reel Packaging, they are designed to operate with a 0.050717 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-23-3, Technology is designed to work in Si, as well as the Single Configuration, the device can also be used as 300 mW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, the device has a 45 V of Collector Emitter Voltage VCEO Max, and Transistor Polarity is NPN, and the Collector Emitter Saturation Voltage is 700 mV, and Collector Base Voltage VCBO is 50 V, and the Emitter Base Voltage VEBO is 5 V, and Maximum DC Collector Current is 500 mA, and the Gain Bandwidth Product fT is 100 MHz, and DC Collector Base Gain hfe Min is 100, and the DC Current Gain hFE Max is 250.

The NSVBC114YDXV6T1G is TRANS 2NPN PREBIAS 0.5W SOT563, that includes Tape & Reel (TR) Packaging, they are designed to operate with a Surface Mount Mounting Type, Package Case is shown on datasheet note for use in a SOT-563, SOT-666, that offers Supplier Device Package features such as SOT-563, DC Current Gain hFE Min Ic Vce is designed to work in 80 @ 5mA, 10V, as well as the 50V Voltage Collector Emitter Breakdown Max, the device can also be used as 500nA Current Collector Cutoff Max. In addition, the Power Max is 500mW, the device is offered in 47k Resistor Emitter Base R2 Ohms, the device has a 250mV @ 300μA, 10mA of Vce Saturation Max Ib Ic, and Transistor Type is 2 NPN - Pre-Biased (Dual), and the Resistor Base R1 Ohms is 10k, and Current Collector Ic Max is 100mA.

Features

Applications

• Inverter
• Interface
• Driver
• Muting