ON NTHD5903T1G

MOSFET (оксид металла)Затвор логического уровня2 P-канала (сдвоенные)20V2.2A155 мОм при 2,2 А, 4,5 В600 мВ при 250 мкА

Overview

The NTHD5902T1 is MOSFET 2N-CH 30V 2.9A CHIPFET, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 8-SMD, Flat Lead Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in ChipFET?, as well as the 2 N-Channel (Dual) FET Type, the device can also be used as 1.1W Power Max. In addition, the Drain to Source Voltage Vdss is 30V, the device is offered in Logic Level Gate FET Feature, the device has a 2.9A of Current Continuous Drain Id 25°C, and Rds On Max Id Vgs is 85 mOhm @ 2.9A, 10V, and the Vgs th Max Id is 1V @ 250μA, and Gate Charge Qg Vgs is 7.5 nC @ 10V.

NTHD5903T1 with circuit diagram manufactured by ON. The NTHD5903T1 is available in 1206-8 Package, is part of the FETs - Arrays.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
2.2A Current - Continuous Drain (Id) @ 25°C
155mOhm @ 2.2A, 4.5V Rds On (Max) @ Id, Vgs
600mV @ 250µA Vgs(th) (Max) @ Id
7.4nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1.1W Power - Max
Surface Mount Mounting Type
ChipFET™ Supplier Device Package