ON NTP6413ANG

N-канальный100 V42A (Tc)4 В @ 250 мкА136 Вт (Тс)-55°C ~ 175°C (TJ)Сквозное отверстие

Overview

The NTP6410ANG is MOSFET NFET TO220 100V 76A 13MOH, that includes NTP6410AN Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 188 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 190 ns, and the Rise Time is 170 ns, and Vgs Gate Source Voltage is +/- 20 V, and the Id Continuous Drain Current is 76 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 2 V to 4 V, and Rds On Drain Source Resistance is 11 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 120 ns, and the Typical Turn On Delay Time is 17 ns, and Qg Gate Charge is 120 nC, and the Forward Transconductance Min is 40 S.

The NTP6411ANG is MOSFET N-CH 100V 72A TO-220AB manufactured by ON. The NTP6411ANG is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 72A TO-220AB, N-Channel 100V 77A (Tc) 217W (Tc) Through Hole TO-220AB, Trans MOSFET N-CH 100V 77A 3-Pin(3+Tab) TO-220AB Tube.

Features

Tube Package
MOSFET (Metal Oxide) Technology
100 V Drain to Source Voltage (Vdss)
42A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
28mOhm @ 42A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
51 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1800 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
136W (Tc) Power Dissipation (Max)
Through Hole Mounting Type