ON NTZD3156CT2G

MOSFET (оксид металла)Затвор логического уровняN- и P-каналы20V540 мА, 430 мА550 мОм @ 540 мА, 4,5 В1 В @ 250 мкА

Overview

The NTZD3155CT2G is MOSFET N/P-CH 20V SOT-563, that includes NTZD3155C Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.000289 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOT-563, SOT-666, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a SOT-563 of Supplier Device Package, and Configuration is N-Channel P-Channel, and the FET Type is N and P-Channel, and Power Max is 250mW, and the Transistor Type is 1 N-Channel 1 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 150pF @ 16V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 540mA, 430mA, and Rds On Max Id Vgs is 550 mOhm @ 540mA, 4.5V, and the Vgs th Max Id is 1V @ 250μA, and Gate Charge Qg Vgs is 2.5nC @ 4.5V, and the Pd Power Dissipation is 250 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8 ns 19 ns, and the Rise Time is 4 ns 12 ns, and Vgs Gate Source Voltage is 6 V, and the Id Continuous Drain Current is 540 mA - 430 mA, and Vds Drain Source Breakdown Voltage is 20 V, and the Vgs th Gate Source Threshold Voltage is 1 V, and Rds On Drain Source Resistance is 1 Ohms, and the Transistor Polarity is N-Channel P-Channel, and Typical Turn Off Delay Time is 16 ns 35 ns, and the Typical Turn On Delay Time is 6 ns 10 ns, and Qg Gate Charge is 1.5 nC 1.7 nC, and the Forward Transconductance Min is 1 S, and Channel Mode is Enhancement.

The NTZD3156CT1G is MOSFET N/P-CH 20V SOT-563, that includes 540mA, 430mA Current Continuous Drain Id 25°C, they are designed to operate with a 20V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as N and P-Channel, Gate Charge Qg Vgs is designed to work in 2.5nC @ 4.5V, as well as the 72pF @ 16V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in SOT-563, SOT-666 Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 250mW, and the Rds On Max Id Vgs is 550 mOhm @ 540mA, 4.5V, and Supplier Device Package is SOT-563, and the Vgs th Max Id is 1V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
540mA, 430mA Current - Continuous Drain (Id) @ 25°C
550mOhm @ 540mA, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
2.5nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
72pF @ 16V Input Capacitance (Ciss) (Max) @ Vds
250mW Power - Max
Surface Mount Mounting Type