ON NVMFD5485NLT3G

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)60V5.3A44 мОм @ 15 А, 10 В2,5 В @ 250 мкА

Overview

NVMFD5489NLWFT1G with pin details, that includes NVMFD5489NL Series, they are designed to operate with a Tape & Reel (TR) Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.001319 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-PowerTDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 N-Channel (Dual), and Power Max is 3W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 330pF @ 25V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 4.5A, and Rds On Max Id Vgs is 65 mOhm @ 15A, 10V, and the Vgs th Max Id is 2.5V @ 250μA, and Gate Charge Qg Vgs is 12.4nC @ 10V, and the Id Continuous Drain Current is 12 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 65 mOhms, and Transistor Polarity is N-Channel.

NVMFD5489NLWFT3G with EDA / CAD Models, that includes Tape & Reel (TR) Alternate Packaging Packaging, they are designed to operate with a Surface Mount Mounting Type, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers Package Case features such as 8-PowerTDFN, Supplier Device Package is designed to work in 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical), as well as the 65 mOhm @ 15A, 10V Rds On Max Id Vgs, the device can also be used as 60V Drain to Source Voltage Vdss, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in 4.5A Current Continuous Drain Id 25°C, the device has a 3W of Power Max, and Input Capacitance Ciss Vds is 330pF @ 25V, and the Vgs th Max Id is 2.5V @ 250μA, and FET Type is 2 N-Channel (Dual), and the Gate Charge Qg Vgs is 12.4nC @ 10V.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
5.3A Current - Continuous Drain (Id) @ 25°C
44mOhm @ 15A, 10V Rds On (Max) @ Id, Vgs
2.5V @ 250µA Vgs(th) (Max) @ Id
20nC @ 10V Gate Charge (Qg) (Max) @ Vgs
560pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2.9W Power - Max
Surface Mount Mounting Type