ON NVMFD5877NLT3G

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)60V6A39 мОм @ 7,5 А, 10 В3 В @ 250 мкА

Overview

The NVMFD5877NLT1G is MOSFET 2N-CH 60V 6A 8SOIC, that includes NVMFD5877NL Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.001319 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-PowerTDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 N-Channel (Dual), and Power Max is 3.2W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 540pF @ 25V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 6A, and Rds On Max Id Vgs is 39 mOhm @ 7.5A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 20nC @ 10V, and the Pd Power Dissipation is 23 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 17 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 60 mOhms, and Transistor Polarity is N-Channel.

NVMFD5875NLWFT3G with circuit diagram, that includes 7A Current Continuous Drain Id 25°C, they are designed to operate with a 60V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 20nC @ 10V, as well as the 540pF @ 25V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in 8-PowerTDFN Package Case, the device has a Tape & Reel (TR) Alternate Packaging of Packaging, and Power Max is 3.2W, and the Rds On Max Id Vgs is 33 mOhm @ 7.5A, 10V, and Supplier Device Package is 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical), and the Technology is Si, and Vgs th Max Id is 3V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
6A Current - Continuous Drain (Id) @ 25°C
39mOhm @ 7.5A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
20nC @ 10V Gate Charge (Qg) (Max) @ Vgs
540pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
3.2W Power - Max
Surface Mount Mounting Type