ON NVMFD5877NLWFT3G

MOSFET (оксид металла)Затвор логического уровня2 N-канала (сдвоенные)60V6A39 мОм @ 7,5 А, 10 В3 В @ 250 мкА

Overview

NVMFD5875NLT3G with pin details, that includes Tape & Reel (TR) Alternate Packaging Packaging, they are designed to operate with a 8-PowerTDFN Package Case, Technology is shown on datasheet note for use in a Si, it has an Operating Temperature range of -55°C ~ 175°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) Supplier Device Package, the device can also be used as 2 N-Channel (Dual) FET Type. In addition, the Power Max is 3.2W, the device is offered in 60V Drain to Source Voltage Vdss, the device has a 540pF @ 25V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 7A, and Rds On Max Id Vgs is 33 mOhm @ 7.5A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 20nC @ 10V.

NVMFD5875NLWFT3G with circuit diagram, that includes 7A Current Continuous Drain Id 25°C, they are designed to operate with a 60V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 20nC @ 10V, as well as the 540pF @ 25V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in 8-PowerTDFN Package Case, the device has a Tape & Reel (TR) Alternate Packaging of Packaging, and Power Max is 3.2W, and the Rds On Max Id Vgs is 33 mOhm @ 7.5A, 10V, and Supplier Device Package is 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical), and the Technology is Si, and Vgs th Max Id is 3V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
6A Current - Continuous Drain (Id) @ 25°C
39mOhm @ 7.5A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
20nC @ 10V Gate Charge (Qg) (Max) @ Vgs
540pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
3.2W Power - Max
Surface Mount Mounting Type