ON SI9936DY

MOSFET (оксид металла)2 N-канала (сдвоенные)30V5A50 мОм при 5 А, 10 В1 В @ 250 мкА

Overview

The SI9936BDY-T1-GE3 is MOSFET 2N-CH 30V 4.5A 8-SOIC, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 8-SOIC (0.154", 3.90mm Width) Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 8-SO, as well as the 2 N-Channel (Dual) FET Type, the device can also be used as 1.1W Power Max. In addition, the Drain to Source Voltage Vdss is 30V, the device is offered in Logic Level Gate FET Feature, the device has a 4.5A of Current Continuous Drain Id 25°C, and Rds On Max Id Vgs is 35 mOhm @ 6A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 13nC @ 10V.

SI9936BDY-TI-E3 with circuit diagram manufactured by VISHAY. The SI9936BDY-TI-E3 is available in SOP8 Package, is part of the IC Chips.

Features

 Battery switch

 Load switch

 Motor controls

Applications

 5.0 A, 30 V. RDS(ON) = 0.050 ? @ VGS = 10 V

 RDS(ON) = 0.080 ? @ VGS = 4.5 V

 Low gate charge.

 Fast switching speed.

 High power and current handling capability