ON SMUN5211DW1T1G

100 мА10 кОм

Overview

SMUN5131DW1T1G with pin details, that includes MUN5131DW1 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.000265 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 6-TSSOP, SC-88, SOT-363, as well as the Surface Mount Mounting Type, the device can also be used as SC-88/SC70-6/SOT-363 Supplier Device Package. In addition, the Configuration is Dual, the device is offered in 250mW Power Max, the device has a 2 PNP - Pre-Biased (Dual) of Transistor Type, and Current Collector Ic Max is 100mA, and the Voltage Collector Emitter Breakdown Max is 50V, and Resistor Base R1 Ohms is 2.2k, and the Resistor Emitter Base R2 Ohms is 2.2k, and DC Current Gain hFE Min Ic Vce is 8 @ 5mA, 10V, and the Vce Saturation Max Ib Ic is 250mV @ 5mA, 10mA, and Current Collector Cutoff Max is 500nA, and the Pd Power Dissipation is 187 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 50 V, and the Transistor Polarity is PNP, and Continuous Collector Current is 0.1 A, and the DC Collector Base Gain hfe Min is 8, and Typical Input Resistor is 2.2 kOhms, and the Typical Resistor Ratio is 1.

The SMUN5133T1G is Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V, that includes Reel Packaging, they are designed to operate with a MUN5133 Series.

Features

Tape & Reel (TR) Package
100mA Current - Collector (Ic) (Max)
50V Voltage - Collector Emitter Breakdown (Max)
10kOhms Resistor - Base (R1)
10kOhms Resistor - Emitter Base (R2)
35 @ 5mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce
250mV @ 300µA, 10mA Vce Saturation (Max) @ Ib, Ic
500nA Current - Collector Cutoff (Max)
187mW Power - Max
Surface Mount Mounting Type