ST STB40NF10T4

N-канальный100 V50A (Tc)4 В @ 250 мкА150 Вт (Тс)-50°C ~ 175°C (TJ)Поверхностный монтаж

Overview

The STB40NF10LT4 is MOSFET N-CH 100V 40A D2PAK, that includes STB40NF10 Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 150 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 65 C, and Fall Time is 24 ns, and the Rise Time is 82 ns, and Vgs Gate Source Voltage is 15 V, and the Id Continuous Drain Current is 40 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Rds On Drain Source Resistance is 30 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 64 ns, and Typical Turn On Delay Time is 25 ns, and the Forward Transconductance Min is 25 S, and Channel Mode is Enhancement.

STB40NF10L with circuit diagram manufactured by ST. The STB40NF10L is available in TO-263 Package, is part of the FETs - Single.

Features

• Exceptional dV/dt capability

• Low gate charge at 100°C

• 100% Avalanche tested

• Application-oriented characterization

• -50 to 175°C Operating junction temperature range

Applications

• Power Management

• Industrial

• Switching application

• Induction furnaces

• Communication devices