ST STD6NK50ZT4

N-канальный500 V5.6A (Tc)4,5 В @ 50 мкА90 Вт (Тс)-55°C ~ 150°C (TJ)Поверхностный монтаж

Overview

The STD6NF10T4 is MOSFET N-CH 100V 6A DPAK, that includes STD6NF10 Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 30 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 65 C, and Fall Time is 3 ns, and the Rise Time is 10 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 6 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Rds On Drain Source Resistance is 220 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 20 ns, and Typical Turn On Delay Time is 6 ns, and the Forward Transconductance Min is 34 S, and Channel Mode is Enhancement.

STD6NK50Z with circuit diagram manufactured by ST. The STD6NK50Z is available in TO-252 Package, is part of the FETs - Single.

Features

SuperMESH™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
500 V Drain to Source Voltage (Vdss)
5.6A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
1.2Ohm @ 2.8A, 10V Rds On (Max) @ Id, Vgs
4.5V @ 50µA Vgs(th) (Max) @ Id
24.6 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
690 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
90W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type
DPAK Supplier Device Package