ST STF10NK50Z

N-канальный500 V9A (Tc)4,5 В @ 100 мкА30 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The STF10N80K5 is MOSFET N-CH 800V 9A TO-220FP, that includes MDmesh? Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.011640 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3 Full Pack, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Through Hole, the device is offered in 1 Channel Number of Channels, the device has a TO-220FP of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 30W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 800V, and the Input Capacitance Ciss Vds is 635pF @ 100V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 9A (Tc), and Rds On Max Id Vgs is 600 mOhm @ 4.5A, 10V, and the Vgs th Max Id is 5V @ 100μA, and Gate Charge Qg Vgs is 22nC @ 10V, and the Pd Power Dissipation is 30 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 14 ns, and the Rise Time is 11 ns, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 9 A, and Vds Drain Source Breakdown Voltage is 800 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 470 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 35 ns, and the Typical Turn On Delay Time is 14.5 ns, and Qg Gate Charge is 22 nC, and the Channel Mode is Enhancement.

The STF10N65K3 is MOSFET N-CH 650V 10A TO-220FP, that includes 35 ns Fall Time, they are designed to operate with a 10 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, Mounting Style is designed to work in Through Hole, as well as the 1 Channel Number of Channels, the device can also be used as TO-220-3 Package Case. In addition, the Packaging is Tube, the device is offered in 35 W Pd Power Dissipation, the device has a 42 nC of Qg Gate Charge, and Rds On Drain Source Resistance is 750 mOhms, and the Rise Time is 14 ns, and Series is N-channel MDmesh, and the Technology is Si, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Typical Turn Off Delay Time is 44 ns, and the Typical Turn On Delay Time is 14.5 ns, and Unit Weight is 0.011640 oz, and the Vds Drain Source Breakdown Voltage is 650 V, and Vgs Gate Source Voltage is 30 V.

Features

Extremely high dv/dt capability

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Applications

•  High level of dv/dt capability for the most demanding applications