ST STF11NM60ND

N-канальный600 V10A (Tc)5 В @ 250 мкА25 Вт (Тс)-55°C ~ 150°C (TJ)Сквозное отверстие

Overview

The STF11NM50N is MOSFET N-CH 500V 8.5A TO-220FP, that includes N-channel MDmesh Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.011640 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 25 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 10 ns, and the Rise Time is 10 ns, and Vgs Gate Source Voltage is 25 V, and the Id Continuous Drain Current is 8.5 A, and Vds Drain Source Breakdown Voltage is 500 V, and the Rds On Drain Source Resistance is 470 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 33 ns, and Typical Turn On Delay Time is 8 ns, and the Qg Gate Charge is 19 nC, and Channel Mode is Enhancement.

The STF11NM60N is MOSFET N-CH 600V 10A TO-220FP manufactured by ST. The STF11NM60N is available in TO-220-3 Full Pack Package, is part of the FETs - Single, , and with support for MOSFET N-CH 600V 10A TO-220FP, N-Channel 600V 10A (Tc) 25W (Tc) Through Hole TO-220FP.

Features

• The worldwide best RDS (ON) area amongst the fast recovery diode device

• 100% Avalanche tested

• Low gate input resistance

• Extremely high dV/dt and avalanche capabilities

Applications

• Industrial

• Power Management

• Switching applications